Oxford Mixed ICP-RIE with Atomic Layer Etching (Plasma Pro 100 Cobra)

The Oxford Mixed ICP-RIE (Inductively Coupled Plasma Reactive Ion Etching) system combines both fluorine-based (Freon) and chlorine-based chemistries, enabling the etching of dielectric materials as well as a broad range of semiconductor and functional thin-film materials. This versatility makes it one of the most flexible dry etching platforms in the facility.
The tool is load-locked and configured to process sample sizes ranging from small dies to 100 mm wafers. It supports substrate temperatures from -10°C to 50°C, allowing optimization of selectivity, anisotropy, and surface quality across diverse material systems.
This system also supports Atomic Layer Etching (ALE)-like process development, enabling highly controlled, low-damage, layer-by-layer material removal for advanced nanofabrication applications.

Note: Metals are permitted in this system; however, certain metals are allowed only as landing layers and must not be etched. (eg: Au, Pt)

Available Process Gases: BCl₃, Cl₂, CHF₃, SF₆, N₂, Ar, O₂, H₂

Materials Commonly Etched:

• Semiconductors: Silicon (Si), Silicon Carbide (SiC), AlGaN, AlN, Graphene, MoS₂, MoTe₂
• Dielectrics and Oxides: Silicon Dioxide (SiO₂), Silicon Nitride (Si₃N₄), Aluminum Oxide (Al₂O₃), Hafnium Oxide (HfO₂), Titanium Oxide (TiO₂), Chromium Oxide (CrO₂), Quartz, Strontium Titanate (STO), Barium Titanate (BTO)
• Metals and Conductive Films: Aluminum (Al), Titanium (Ti), Titanium Nitride (TiN), Niobium Titanium Nitride (NbTiN), Tungsten (W), Chromium (Cr),
• Advanced Materials: Lithium Niobate (LN), Diamond, Aluminum Scandium Nitride (AlScN)

  Operating Limits

Sample Preparation Requirements

• Samples must be compatible with available chemistries and process limits.
• Users introducing new materials or processes should consult facility staff prior to use.