Ultra High Speed Electronic Systems
Our society is at the cusp of a new era where wireless technology is ubiquitous and capable of addressing some of the biggest challenges related to transportation, health care, manufacturing, and how we interact and communicate with each other.
HMNTL has been at the forefront of high-frequency device fabrication and testing with significant contributions in the domain of III-V compound semiconductors and the invention of the pseudomorphic heterojunction bipolar transistor (PHBT). Our legacy includes technology innovators and leaders of major technical societies.
Within a 10-year horizon, our work on wide bandgap (WBG) and ultra-wide band gap (UWBG) materials, advanced fabrication processes for heterogeneous integration, and high-speed characterization of devices under extreme conditions will drive systems advances for 5G and beyond.