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The Oxford Freon Reactive Ion Etcher (RIE) is a general-purpose dry etching system designed for processing a wide variety of dielectric, semiconductor, and polymer materials. The tool is not load-locked and is configured to accommodate sample sizes ranging from small dies to 100 mm wafers.
The system supports anisotropic plasma etching with excellent process control, making it suitable for microfabrication, MEMS, photonics, and nanofabrication applications.
Available Process Gases: CHF₃,SF₆,CF₄,Ar,N₂,O₂
Typical Etch Materials: Silicon dioxide (SiO₂),Silicon nitride (Si₃N₄),Silicon Glass and quartz,Photoresist,BCB,,Polyimide
Operating Limits
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Parameter
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Range / Limit
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RF Bias Power
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Up to 500 W
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Chamber Pressure
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Up to 80 mTorr
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Chuck Temperature
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-5°C to 45°C
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Wafer Size
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Small samples to 100 mm wafers
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Sample Preparation Requirements:
- Users wishing to process new materials or develop new etch recipes should consult facility staff prior to use.
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