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The Oxford Freon ICP-RIE (Inductively Coupled Plasma Reactive Ion Etching) system is primarily used for high-rate, anisotropic etching of dielectric materials. The tool is load-locked and configured to process sample sizes ranging from small dies to 100 mm wafers.
The system supports substrate temperatures from -10°C to 50°C, enabling optimization of etch profiles, selectivity, and surface quality for a variety of materials.
Available Process Gases: CHF₃, SF₆, CF₄, Ar, O₂
Materials Commonly Etched: Silicon (Si), Silicon Dioxide (SiO₂), Silicon Nitride (Si₃N₄), Graphene, Silicon Carbide (SiC)
Operating Limits
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Parameter
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Range / Limit
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RF Bias Power
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Up to 250 W
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ICP Source Power
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Up to 2000 W
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Chamber Pressure
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3–80 mTorr
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Chuck Temperature
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-10°C to 50°C
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Wafer Size
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Small samples to 100 mm wafers
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Sample Preparation Requirements:
- Samples must be securely mounted to a carrier wafer using Crystalbond.
- No metal-containing samples are allowed except Al2O3.
- Users introducing new materials or developing new etch processes should consult facility staff before use.
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