Aixtron MOCVD GaN, AlGaN, InGaN
| The Aixtron MOCVD reactor can be used to grow III-N compound semiconductors. It features a close-coupled showerhead (CCS) design and can be configured for growth on 3x2” wafers up to 1x4” wafers. It has 12 metalorganic & 7 hydride gas lines including TMGa, TEGa, TMln, TMAl, NH3, Cp2Mg, and Si2H6. The substrate heater can go to 1200 °C. It is available for internal, external and company use. |