Aixtron MOCVD GaN, AlGaN, InGaN

Enabling Next-Generation Semiconductors with Advanced MOCVD at UIUC

At the MNTL UIUC, our Aixtron Close Coupled Showerhead (CCS) MOCVD reactor is a cornerstone for pioneering research in wide and ultra-wide bandgap (UWBG) semiconductors, enabling the development of high-performance materials and devices for power electronics, photonics, and clean energy technologies.

Precision Epitaxy for High-Impact Applications

Our MOCVD system supports the growth of III-nitride semiconductor materials (bulk and nanostructures) such as GaN, AlGaN, InGaN, AlN, and InAlN, with precise control over composition, doping, and heterostructure design, essential for:

• High-efficiency power transistors (HEMTs)
• UV-visible LEDs and laser diodes
• Solar-driven photocatalysis and hydrogen generation
• Advanced sensors and quantum devices

System Capabilities

• Wafer flexibility: 3×2” to 1×4”
• 12 metalorganic & 7 hydride gas lines: including TMGa, TEGa, TMIn, TMAl, NH₃, Cp₂Mg, Si₂H₆
• Substrate surface temperature up to 1200 °C, ideal for high-crystalline quality
• CCS design ensures uniformity and repeatability

Driving Innovation Through Collaboration

The MOCVD tool is available to:

• Internal researchers at UIUC
• Academic collaborators seeking advanced epitaxial growth
• Industry partners focused on device prototyping, process development, or novel material exploration

Our team brings deep expertise in nanostructure engineering, bandgap tuning, and epitaxial growth optimization, supporting innovation in strategic areas such as next gen power electronics, advanced optoelectronics, and sustainable energy systems.

Collaborate with us to advance the frontier of semiconductor technology.

Contact: Dr. Aadil Waseem – Senior Research Engineer