XACTIX XeF₂ Etcher

XACTIX XeF₂ Etcher

The XACTIX XeF₂ etching system is a dry, isotropic silicon etching tool that operates at room temperature. XeF₂ etching provides extremely high selectivity of silicon to photoresists and most hard masks, making it well suited for MEMS release processes, sacrificial layer removal, and undercut etching applications. The system provides isotropic dry etching of silicon using XeF₂ gas chemistry, enabling highly controlled undercutting and release of micro- and nano-scale structures. Its near-infinite selectivity to common masking materials such as photoresist and hard masks allows for robust process integration without significant mask erosion. The process is particularly useful for MEMS fabrication and other applications requiring selective silicon removal without plasma-induced damage.|
The tool is configured to process small samples through 100 mm wafers. The process is plasma-free and performed at room temperature, enabling gentle silicon removal with minimal damage to surrounding structures.

Materials Etched: Silicon (Si)
Process Gases: XeF₂ (Vapor), N₂ (carrier/dilution gas)

Operating Limits

Parameter

Range / Limit

Maximum Operating Pressure

3.5 Torr

Wafer Size

Small samples to 100 mm wafers

Sample Compatibility Notes

  • Users should ensure mechanical stability of structures prior to processing, as isotropic etching can lead to significant undercutting. The process is compatible with standard photoresists and most hard masks due to its high selectivity.