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The Oxford Cl ICP-RIE (Inductively Coupled Plasma Reactive Ion Etching) system is dedicated to the etching of III-V compound semiconductors and other approved materials. The tool is load-locked and configured to process sample sizes ranging from small dies to 100 mm wafers.
The system is equipped with both a laser interferometer reflectance detector enabling precise process monitoring and endpoint detection during etching.
Available Process Gases :Cl₂, BCl₃, CH₄, SF₆, Ar,O₂,H₂
Materials Commonly Etched: GaAs, InGaAs, InP, GaN, Ga₂O₃ ,Al₂O₃, Diamond
Operating Limits:
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Parameter
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Range / Limit
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RF Bias Power
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Up to 250 W
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ICP Source Power
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Up to 2000 W
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Chamber Pressure
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3–80 mTorr
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Chuck Temperature
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-5°C to 45°C
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Wafer Size
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Small samples to 100 mm wafers
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Sample Preparation Requirements
- Samples must be securely mounted to a carrier wafer using Crystalbond.
- No metal-containing samples are allowed except Al2O3.
- Users developing new etch processes or introducing new materials should consult facility staff before use.
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