M. Razeghi, A. Haddadi, A.M. Hoang, G. Chen, S.I. Bogdanov, S.R. Darvish, F. Callewaert, P.R. Bijjam and R. McClintock, "Antimonide-based type-II superlattices: a superior candidate for the third generation of infrared imaging systems" J. of Elec. Mat. 43(8), 2802 (2014)
G. Chen, A.M. Hoang, S.I. Bogdanov, A. Haddadi, S.R. Darvish and M. Razeghi, “Effect of sidewall surface recombination on the quantum efficiency in a Y2O3 gated type-II InAs/GaSb long-infrared photodetector array” Appl. Phys. Lett. 103, 223501 (2013)
G. Chen, A.M. Hoang, S.I. Bogdanov, P.R. Bijjam, B.-M. Nguyen and M. Razeghi, “Investigation of impurity in type-II InAs/GaSb superlattices via capacitance-voltage measurement” Appl. Phys. Lett. 103, 033512 (2013)
G. Chen, E.K. Huang, A.M. Hoang, S.I. Bogdanov, S.R. Darvish and M. Razeghi, “Surface leakage investigation via gated type-II InAs/GaSb long-wavelength infrared photodetectors” Appl. Phys. Lett. 101, 213501 (2012)
M. Razeghi, A. Haddadi, A.M. Hoang, E.K. Huang, G. Chen, S.I. Bogdanov, S.R. Darvish, F. Callewaert and R. McClintock “Advances in antimonide-based Type-II superlattices for infrared detection and imaging at center for quantum devices” Infrared Physics and Technology, 59, 41 (2012)
B.M. Nguyen, G. Chen, A.M. Hoang, S. Abdollahi Pour, S.I. Bogdanov, and M. Razeghi, “Effect of contact doping on superlattice-based minority-carrier unipolar detectors” Appl. Phys. Lett. 99, 033501 (2011)
S.I. Bogdanov, B.M. Nguyen, A.M. Hoang and M. Razeghi, “Surface leakage current reduction in long wavelength infrared type-II InAs/GaSb superlattice photodiodes” Appl. Phys. Lett. 98, 183501 (2011)
B.M. Nguyen, S.I. Bogdanov, S. Abdollahi Pour, and M. Razeghi, “Minority electron unipolar photodetectors based on type II InAs/GaSb/AlSb superlattices for very long wavelength infrared detection,” Appl. Phys. Lett. 95, 183502 (2009)
S. Abdollahi Pour, B.M. Nguyen, S.I. Bogdanov, E.K. Huang, and M. Razeghi, “Demonstration of high performance long wavelength infrared type II InAs/GaSb superlattice photodiode grown on GaAs substrate,” Appl. Phys. Lett. 95, 173505 (2009)
B.M. Nguyen, D. Hoffman, E.K. Huang, S.I. Bogdanov, P.Y. Delaunay, M. Razeghi and M.Z. Tidrow, “Demonstration of midinfrared type-II InAs/GaSb superlattice photodiodes grown on GaAs substrate,” Appl. Phys. Lett. 94, 223506 (2009)